Through the silicon bonding, we achieve a wafer-level vacuum package, and the wire-bonding PAD is made after the fabrication is complete.
在完成整体结构圆片级真空封装的同时，通过引线腔结构方便地实现了中间电极的引线。
Through the silicon bonding, the wafer-level vacuum package is achieved and the wire-bonding PAD is made after all the fabrication work is finished.
在完成整体结构圆片级真空封装的同时通过引线腔结构方便地实现了中间电极的引线。
Through the silicon bonding, the wafer-level vacuum package is achieved and the wire-bonding PAD is made after all the fabrication work is finished.
在完成整体结构圆片级真空封装的同时通过引线腔结构方便地实现了中间电极的引线。
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