The incident Angle dependences of the cross sections for single event upset and single event latchup are presented.
获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系。
Feasibility of prediction for single event upset rate based on 252cf experimental results in space orbits was analyzed.
在实验研究的基础上，分析了应用锎源实验结果预估空间轨道单粒子翻转率的可行性。
Two typical master-slave type D flip-flop of strong hardness to Single Event Upset(SEU) for radiation environment are introduced.
介绍了两种已有的主从型边沿D触发器，它们具有很强的抗单粒子翻转能力。
The paper also introduces the function of reading back configuration data from FPGA, this function can verify the Single Event Upset.
探讨了利用FPGA回读功能实现抗单粒子翻转的设计方法。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
The result of the experiments showed that this fault injector based on MCUsystem can simulate the effect of single event upset, and can succeed in fault injection to the system.
实验结果证明，此故障注入方法可以模拟单粒子事件对系统的影响，并能成功对系统注入故障。
The result of the experiments showed that this fault injector based on MCUsystem can simulate the effect of single event upset, and can succeed in fault injection to the system.
实验结果证明，此故障注入方法可以模拟单粒子事件对系统的影响，并能成功对系统注入故障。
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