Two typical master-slave type D flip-flop of strong hardness to Single Event Upset(SEU) for radiation environment are introduced.
介绍了两种已有的主从型边沿D触发器，它们具有很强的抗单粒子翻转能力。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
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