The measured undestructivly theory for the surface energy level and the surface state density of semiconductors fay the method of photovoltages at changed temperatures is reported.
本文报道了应用变温光伏方法对半导体表面能级，表面态密度的非破坏性测量原理。
When a photon strikes the surface, it excites an electron to a higher energy level, which is specific to the material.
当光子照射到材料表面时，电子受到光子的激发由一个能级跳到更高的能级上，而这些能级对材料来说是特定的。
By means of DSC, the results of investigation showed that the level of surface energy of flaked Ag powder was correlated with physical state.
通过示差扫描量热计(dsc)分析证明，片状银粉表面能量大小与粉末的物理状态有关。
In the case of the limited level density of the material surface energy, the fracture stress and the calculation formula of the engineering damage were studied.
本文研究考虑损伤时材料的断裂应力，推导出了在表面能密度有限的情况下，损伤断裂应力的计算公式。
Finally, according to the concept of quasi-heterojunction the Fermi energy level pinning on the surface is discussed.
从准异质结的概念出发，讨论了表面费米能级钉扎现象。
Finally, according to the concept of quasi-heterojunction the Fermi energy level pinning on the surface is discussed.
从准异质结的概念出发，讨论了表面费米能级钉扎现象。
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