The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
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