借助电荷控制法并引入有效寿命概念获得反向恢复时间。
The reverse recovery time is also obtained by using charge-controlled method.
采用扩铂工艺制造二极管能够有效地减小开关二极管的反向恢复时间，提高其开关速度。
Using the technology of Pt diffusion to produce diodes can shorten the reverse recovery time and increase the velocity of switching.
测试结果表明，此类快恢复二极管具有反向恢复时间短、软度大、反向漏电低的优良特性，在国际上处于领先水平。
The experiment results show that this kind of diode have fast reverse recovery time, large reverse softness and low reverse leakage.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
应用推荐