利用电子束曝光机完成有关邻近效应的实验。
The proximity effect in the E-beam lithography system was verified by experiments.
可变矩形电子束曝光机的基本曝光图形是矩形。
The elementary exposure pattern of a variable rectangular electron beamexposure machine is a rectangle.
可变矩形电子束曝光机的基本曝光图形是矩形。
The elementary exposure pattern of a variable rectangular electron beam exposure machine is a rectangle.
电子束曝光机的偏转系统控制电子束偏转扫描。
The deflection system of an electron beam lithography tool is used to control deflection scanning of electron beam.
本文介绍一种电子束曝光机用新型精密高压电源。
A new type high accuracy high voltage D. C. power supply used for electron beam exposure sysfem is described.
电子束曝光技术是掩模版制作和纳米器件研究的主要手段。
Electron beam lithography machine is the key instrument for mask making and research of nanometer device.
从一小片石墨烯开始，采用电子束曝光在材料上刻出通道。
They begin with a small sheet of graphene and carve channels into the material using electron beam lithography.
利用SDS - 3电子束曝光机完成有关邻近效应的试验。
The proximity effect in the SDS-3 E-beam lithography system is verified by experiments.
为满足纳米级电子束曝光系统的要求，设计了高速图形发生器。
The high speed Patten Generator is designed for nanometer E-beam lithography system.
本文为此提出了利用电子束曝光和辐照直接制作功能纳米结构。
We proposed to fabricate functional nanostructures directly by electron-beam lithography and irradiation.
本文介绍了电子束曝光机激光定位工作台的一种新型吊装结构。
In this paper, a unique hoisting structure of laser positioning stage system for electron-beam lithography machine is described.
结合实际工作，分析、探讨了影响电子束曝光机加工微细化的因素。
We study the factors which affect electron-beam micro lithography, combining with our practical work.
正在研制的激光定位吊装结构工作台系统是电子束曝光机的主要组成部分。
The laser Positioning stage system with hoisting structure which is being developed is the main part of the Electron - beam Lithography Machine.
DY 2001a型电子束曝光机是作为实用化的小型曝光系统而研制的。
DY2001A Electron Beam Lithography System (EBLS) is developed as a practical miniature EBLS.
在电子束曝光胶图形的三维显影模拟工作中，首次使用了最精确的三维线踪模型。
The most accurate ray-tracing model is used firstly on the development simulation of resist exposed by electron beam.
本文简要地介绍了一种圆形电子束曝光机应用软件的结构、工作原理及工作过程；
The composition, principle and working procedure of the application software of EBES-40A electron beam Lithography system are introduced.
本文总结了用于可变矩形电子束曝光机激光定位工件台电控系统的研制及实验经验。
The development and experiments of electronic controlling system for variable rectangular E-beam lithography and lasser positioning stage are summed in the paper.
本文简要介绍了一种矩形电子束曝光机图形转换软件的结构、工作原理和工作过程。
This paper presents a kind of data conversion software used in the variable-shaped e-beam lithography, especially on its composition, working theory and working procedure.
报道了一种用电子束曝光的方法在绝缘体上硅的脊状光波导上制做布拉格光栅的技术。
The fabrication of Bragg gratings on silicon-on-insulator (SOI) rib waveguides using electron-beam lithography is presented.
将付里叶变换法运用于电子束曝光的邻近效应校正中，形成了快速、准确的剂量校正法。
By Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.
由SDS-3电子束曝光机试验结果表明，复合静电偏转可以达到磁偏转相似的像差水平。
The experimental results of SDS-3 Ebeam lithography machine show that the aberrations of the electrostatic deflection are in the same order of the magnetic deflection.
文中还对各种类型的电子束曝光机进行了比较，并报导了电子束曝光在其它领域的应用情况。
Here also compares various versions of EBL machine and reports the application of EBL in other field.
电子束曝光机版图切割过程中可能出现带内孔的多边形，并且多边形内环与外环之间可能发生重叠。
During the layerout cutting process for thee beam lithography system, some polygons with one or more inner holes may appear.
根据平面区域变换的原理，导出电子束曝光机扫描场的畸变校正函数，并给出计算机模拟校正的结果。
A scan field distortion correction function fore-beam exposure system is deduced on the basis of the plane field alternation principle, and a simulative fruit is given by computer.
在与各种探测器比较的基础上，我们设计了微通道板探测器，它是目前用于电子束曝光机的最先进的探测器。
On basis of comparison with other types of detectors, we designed microchannel plate detector which is the most advanced detector for EBM up to now.
为实现电子束曝光机扫描场的线性畸变校正，设计了图形发生器的成像系统，该系统包括硬件和软件两部分。
An imaging system of pattern generator was designed to correct linear distortion of scanning field of ane-beam lithography system, which was composed of both hardware and software.
本文扼要介绍了电子束直写圆片的原理，地形标记的识别，以及电子束曝光系统能识别的圆片标记的制造技术。
In this paper, the principle of electron beam write wafer is discussed briefly distinguish topography mark, and make the technology of wafer mark which is found by the electron beam exposure system.
通过对电子束扩散函数与显影对比度的分析，本文认为电子束曝光的分辨极限与显影液在纳米尺度下的扩散限制有关。
By analyzing the spread function and development contrast curve, we hypothesized that the resolution limit of electron-beam lithography is primarily limited by developer-diffusion.
电子束曝光技术这些优势使电子束曝光技术不仅在掩模版制作方面一直处于主流地位而且将在纳米器件的研制和生产中发挥重要作用。
All these advantages make the technology not only be in the major position but also play an important part in the research and production of nanometer device.
针对X射线透射光栅摄谱仪中的高线密度光栅，研究了采用电子束曝光和X射线曝光技术结合制作高线密度X射线透射光栅的工艺技术。
The manufacture of high-line-density X-ray transmission gratings for X-ray spectroscopy by using electron beam lithography and X-ray lithography was reported.
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