冲压弯头的耐压性能最佳。
机械绝度高，耐压性能好。
绝缘体的耐压性能测试设备要能达到第16.20条中所列标准。
The dielectric voltage-withstand test apparatus shall be in accordance with Clause 16.20.
在MIM结构的性能测试上，主要测试了这种结构的I-V特性曲线，以及介质层的耐压性能。
The I-V curve and the voltage-standing of this MIM structure are also obtained when measured its performance.
介绍了用单芯电缆传输脉冲信号的技术原理和电路实现，分析了实现电路的耐压性能和传输性能。
The technology principle and circuit realization are introduced for pulse signal transmission through single cable.
结果表明，该陶瓷耐压性能不仅与PTC效应，压阻效应有关，还与显微组织结构中存在的玻璃相有关。
The results show that withstand voltage characteristics of the ceramics is not only correlated with both effects of PTC, voltage-dependent resistivity, but also with glass phase in microstructure.
其中石棉橡胶板结构致密，耐压性能好，耐温性能也很好，在阀门本身和阀门与管子的法兰连接中，使用极为广泛。
Asbestos rubber sheet in which the structure of dense, good pressure, good heat resistance, and valves in the valve itself and the pipe flange connection, the use of a wide range.
(无规共聚聚丙烯)管材是广泛应用于民用和工业给排水系统的一种新型建筑材料，但存在耐热、耐压性能方面的不足。
PPR pipe is a new type construction material widely used in civilian and industrial water supply and sewerage system, but it is poor in hot and pressure resistance.
提出并研究了一个利用疏水性中空纤维膜去除水中溶解氧的新工艺，测定了所采用的聚丙烯(PP)中空纤维膜的耐压性能。
In this paper, a new process of removing dissolved oxygen using hydrophobic polypropylene (PP) hollow fiber was offered and studied. The strength of the hollow fiber was measured.
PPR(无规共聚聚丙烯)管材是广泛应用于民用和工业给排水系统的一种新型建筑材料，但存在耐热、耐压性能方面的不足。
PPR pipe is a new type construction material widely used in civilian and industrial water supply and sewerage system, but it is poor in hot and pressure resistance.
我们对这种方案进行了仔细分析，包括在设计工作条件和非设计工作条件下IGBT的性能，结果表明：该结构在两种情况下都能明显改善IGBT的关断、耐压性能。
Obviously, the sustaining voltage can also be increased since the anode-short structure makes the breakdown performance of the IGBT close to a normal PN junction.
我们对这种方案进行了仔细分析，包括在设计工作条件和非设计工作条件下IGBT的性能，结果表明：该结构在两种情况下都能明显改善IGBT的关断、耐压性能。
Obviously, the sustaining voltage can also be increased since the anode-short structure makes the breakdown performance of the IGBT close to a normal PN junction.
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