它装有256兆字节的只读存储器和512兆字节的随机存取存储器。
可变拓扑结构的随机存取存储器?。
主存储器又称为随机存取存储器，简称内存。
Primary memory is known as random access memory(RAM) and simple named memory.
所述存储器控制器耦接一动态随机存取存储器。
The memory controller is coupled with a dynamic random access memory.
本发明涉及一种电阻型随机存取存储器及其制造方法。
Provided is a resistance random access memory device and a method of fabricating, the same.
在随机存取存储器中，计算机能够直接找到你想要的信息。
In random access storage, the computer can go directly to the information you want.
随机存取存储器的数字-模拟转换器RAMDAC?。
计算机包括一些短期存储器，称为随机存取存储器或叫做RAM。
Computers contain a certain amount of short-term memory, called random access memory, or RAM.
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
让我们称它为iram，代表智能随机存取存储器，因为这一芯片上。
Let's call it an IRAM, standing for intelligent random-access memory, since most of the transistors on this chip will be devoted to memory.
每台计算机都有一个处理器和一些随机存取存储器(RAM)，后者也称为物理内存。
Every computer has a processor and some random-access memory (RAM), also known as physical memory.
分页空间（或交换空间）是一种逻辑卷，用来存储不使用随机存取存储器（RAM）进程的临时区域。
Paging space, or swap space, is a type of logical volume that serves as a staging area for processes that are not using active random-access memory (RAM).
应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。
The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories(SRAMs).
我们希望动态随机存取存储器(DRAM)的良好的定价环境，现在关键金属价格一直上涨。
We expect favorable pricing environment for DRAM, key metals are increasing.
这个过程花这么长时间的原因是，每当打开计算机时，计算机的操作系统必须从硬盘载入到随机存取存储器(RAM)。
The reason that this process takes so long is that a computer's operating system must be loaded from its hard disk into its random-access memory (RAM) every time the machine is turned on.
在一个实施例中，所述半导体器件包括具有多个NFET(110)和多个PFET(112)的静态随机存取存储器(SRAM)单元。
In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
在一个实施例中，所述半导体器件包括具有多个NFET(110)和多个PFET(112)的静态随机存取存储器(SRAM)单元。
In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
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