...从价带激发所需能量小得多，因此，游离状态电子很易激发到导带成为载流子，能提 供电子载流子的杂质称为施主杂质(donor impurity)，相应能级称为施主能级,位于禁带上方靠 近导带底附近。
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... 施釉：glaze 施素不纯物：Donor impurity 施加电流只电压测试：current source(force)voltage measurement ...
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donor impurity level 施主杂质能级
donor impurity state 施主杂质态
donor impurity states 施主杂质态
shallow-donor impurity 浅施主杂质
shallow donor impurity 浅施主杂质
negative donor impurity 负施主杂质
hydrogenic-donor impurity 类氢杂质
hydrogenic donor impurity 类氢施主杂质
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The ground state energies of a shallow donor impurity near a sharp surface of a semi-infinite crystal are studied.
本文用变分法计算了半无限晶体近表面内浅态施主杂质的基态能量。
The results show that the binding energies of shallow donor impurity states strongly depend not only on the wire radius, but also on the applied electric field and the impurity position in the wire.
结果表明杂质态结合能不只是量子线半径的函数，它还随杂质位置，外电场强度发生变化。
At the late period of growth of colloidal particles, the concentration of donor atoms can be approximately represented by the critical concentration of impurity.
在胶粒生长后期，施主原子浓度可以近似地用杂质临界浓度表示。
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