Dry etching technique of silicon is a very important process in the modern semiconductor industry.

对硅的干法刻蚀技术是现代半导体工业中非常重要的一项工艺。

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The present invention relates to combined dry and wet etching process for multilayer film, especially in anisotropic magnetic resistance effect (AMR) sensor manufacture.

本发明涉及多层膜的蚀刻方法，特别是各向异性磁电阻效应(amr)传感器制造中所使用的多层膜的蚀刻方法。

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