本文用紧束缚模型和单电子理论研究吸附原子间的间接相互作用能。
The indirect interaction between adatoms are studied by using tight-binding model and one-electron theory.
基于传统单电子理论，阐述了单电子晶体管的结构、原理、特点及应用。
The structures, principles, characters and applications of single electron transistors are clarified, based on the traditional theories.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
应用推荐