三星率先在7纳米导入极紫外光（EUV）作为微影设备，借此缩减光层，而研发团队并朝向5纳米制程技术前进，预计在2018年下半年开始，以7纳米制程生产高通骁龙855及三星E...
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极紫外光刻 EUV ; EUVL ; extreme ultra-violet lithography
极紫外光刻技术 EUVL
极紫外光谱成像仪 FUVSI
与极紫外光光罩传送盒 EUV POD
第一次行使极紫外光刻 EVV
的极紫外光微影 Extreme Ultra Violet Lithography ; EUVL
无极紫外光 electrodeless ultraviolet
近几年来，宽禁带半导体材料引起人们的关注，因为这些材料在蓝光及紫外光发光二极管、半导体激光器和紫外光探测器上有重要的应用价值。
In recent years, much attention has been given to wide band gap semiconductors for the wide USES in blue and ultraviolet light emitters and detectors.
在紫外光探测器、短波长发光二极管、激光器二极管、太阳能电池等领域有着广泛的应用前景。
ZnS has been recognized as a promising material for use in many fields such as ultraviolet (UV) detectors, short-wavelength light-emitting diode (LED), laser diode (LD), and solar cells, etc.
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