首先，对实验中所用到的热丝化学气相沉积（Hot Filament Chemical Vapor Deposition, HFCVD）设备进行了改造与设计。其次，以β-SiC和β-Si3N4晶体结构为基础，建立SiCN的基本模型。
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在热丝化学气相沉积金刚石系统中，衬底温度是影响金刚石成膜质量的关键因素之一。
In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films.
本工作利用热丝化学气相沉积(HFCVD)法获得了(100)取向不同质量的金刚石薄膜，并制备了CVD金刚石辐射探测器。
In present work, (100) oriented CVD diamond films with different quality obtained by a hot-filament chemical vapor deposition (HFCVD) technique were used to fabricate radiation detectors.
采用热丝化学气相沉积法在覆盖c _(60)膜的硅基片上沉积金刚石膜，研究了金刚石膜的成核与生长。
In this paper, the diamond films were grown on the C_ (60) -coated silicon substrate by using hot-filament chemical vapor deposition technique. The diamond nucleation and growth were studied.
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