为进一步提高SnO2性能,人们把目光转向了掺杂,其中锑掺杂氧化锡(ATO,Antimony Doped Tin Oxide)是一种N-型半导体材料,具有导电、高灵敏度、色浅透明、耐侯性和机械稳定性高等特点[2]。
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探讨了锑掺杂氧化锡的缺陷与能级效应，确定了导电粉末中掺杂效应的缺陷反应。
The defect and energy level effect of antimony-doped tin oxide were discussed with possible defect reactions for the conductive powder.
掺杂锑的氧化锡厚膜，在氧化气氛中和含有一定水蒸汽的大气中，经常用于检测易燃气体。
The antimony-doped stannic oxide thick-film used to detect combustible gases in oxidizing and fixed water vapor-containing atmospheres.
复合材料是以锑掺杂二氧化锡纳米粉体为导电填料、可溶性绝缘聚合物为基体的透明导电复合材料及其制备方法。
The composite material is a transparent conductive composite material in which antimony doped tin oxide nano powder is used as conductive filler and the soluble insulating polymer is used as matrix.
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