... gallium-arsenide luminescence diode 砷化镓发光二极管 GaAs - Gallium Arsenide 镓砷化物 gallium arsenide field-effect transistor 砷化镓场效晶体管 ...
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另外，最重要的是，镓砷化物比硅贵得多。
Moreover, gallium arsenide is much more expensive than silicon in the first place.
镓砷化物，硅，和锗元素都属于半导体，而如今半导体在所有的现代电子元件中都会用到。
Gallium arsenide, silicon, and germanium are all examples of semiconductors, the type of material used in virtually all modern electronics.
方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
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