砷化铝（Aluminium arsenide）是一种半导体材料，它的晶格常数跟砷化镓类似。砷化铝的晶系为等轴晶系，熔点是1740 °C，密度是3.76 g/cm?
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aluminium gallium arsenide 铝砷化镓 ; 砷化镓铝 ; 或是砷化镓铝
aluminium m arsenide 砷化铝
aluminium gallium arsenide algaas 砷化镓铝
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The device that Dr Kirczenow and Dr Rego had in mind is called a semiconductor heterostructure a semiconductor sandwich made of a thin layer of aluminium gallium arsenide held between two thicker layers of gallium arsenide.
ECONOMIST: Microelectronics
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