anodic bonding 阳极键合 ; 阳极焊 ; 合技术
Model for Anodic Bonding 阳极连接模型
silicon-glass anodic bonding 硅玻璃阳极键合
The glass thin film was suitable for anodic bonding as the intermediate layer. It is essential for realizing anodic bonding of metal to ceramic.
通过XRD，EDX和SEM等手段对薄膜的分析表明，化学组成成分上与玻璃靶材相比没有变化，适合作为中间层为实现陶瓷与金属的阳极键合连接提供必要的前提条件。
参考来源 - 阳极键合高压（脉冲）电源设计及键合工艺特性分析But as one of the packaging technology, anodic bonding of silicon-glass has many deficiencies.
但作为微机电系统封装的关键技术——半导体硅与玻璃的阳极键合技术，仍然存在着许多问题。
参考来源 - LAS系统微晶玻璃的制备及阳极键合性能与工艺参数关系的研究Anodic bonding technology of semiconductor silicon and glass wafer is key technology of MEMS.
半导体硅与玻璃的静电键合技术是微电子机械系统(MEMS)的关键技术，而作为关键材料之一的静电键合玻璃有着广阔的工业应用前景。
参考来源 - 静电键合用微晶玻璃的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
A tunneling accelerometer is fabricated and characterized based on the extension of the silicon-glass anodic-bonding and deep etching releasing process provided by Peking University.
提出了一种基于北京大学硅玻璃键合深刻蚀释放工艺的扩展工艺，用来加工微型隧道加速度计。
The stress of anodic bonding is analysed and the math model of no match thermal stress about anodic bonded elastic diaphragm is built.
通过对静电封接结构的受力分析，建立了静电封接后弹性膜片的热失配应力数学模型。
The intimate contact of two surfaces to be bonded is a prerequisite for the anodic bonding, therefore, it is very important to analyze evolution characters of the intimate contact area.
待连接表面间的紧密接触是实现阳极连接的必要条件，因此分析紧密接触面积演化特点非常重要。
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