deep sub-micron 深亚微米 ; 随着深亚微米
Deep Sub-micron Technology 因深次微米制程技术
deep sub-micron ic 深亚微米ic
deep sub-micron MOST 深亚微米MOST
Very Deep Sub-Micron 超深亚微米 ; 深亚微米
deep sub micron 深亚微米
deep sub-micron cmos 深亚微米cmos
ultra deep-sub-micron 超深亚微米pmosfet
It has been demonstrated that compared to simulator-based method, manufacturable deep sub-micron CMOS analog circuits can be synthesized using this system in a short run time.
大量的实验结果表明：与基于模拟器的方法相比，采用该系统可以快速综合出可制造的深亚微米cmos模拟单元电路。
A new method for layout design based on region constraints was presented to resolve the timing closure problem of physical design in deep sub-micron technology.
针对深亚微米工艺下版图设计中存在的时序收敛问题，提出了一种区域约束的版图设计方法。
The hot carrier effects (HCE) in deep sub-micron devices has been studied.
对深亚微米器件中热载流子效应(hce)进行了研究。
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