deep sub-micron 深亚微米 ; 随着深亚微米
Deep Sub-micron Technology 因深次微米制程技术
deep sub-micron ic 深亚微米ic
deep sub-micron MOST 深亚微米MOST
Very Deep Sub-Micron 超深亚微米 ; 深亚微米
deep-sub-micron 深亚微米
deep sub-micron cmos 深亚微米cmos
ultra deep-sub-micron 超深亚微米pmosfet
This paper presented the various technologies in RF design and explored the feasibility and difficulties of deep sub micron CMOS RF design. And problems associated are also discussed.
本文介绍了当今RF设计的主流工艺，并分别对基于硅的深亚微米cmos工艺在RF设计中的可行性和困难进行了研究，评述了其中存在的问题。
It has been demonstrated that compared to simulator-based method, manufacturable deep sub-micron CMOS analog circuits can be synthesized using this system in a short run time.
大量的实验结果表明：与基于模拟器的方法相比，采用该系统可以快速综合出可制造的深亚微米cmos模拟单元电路。
The hot carrier effects (HCE) in deep sub-micron devices has been studied.
对深亚微米器件中热载流子效应(hce)进行了研究。
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