Device Processing: Etching. Surface passivation; dielectric films.
元件制程：蚀刻，表面钝化，介电材料薄膜。
Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片表面复合速度增加。
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