全耗尽晶体管与传统的晶体管在结构上的区别在于,前者的沟道并不由其掺杂程度(doping level)定义,而是由其物理尺寸(physical dimensions)定义,边界由氧化物材料构成。
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background doping level 本底掺杂能级
low doping level 掺杂浓度较低
high doping level 高掺杂浓度
mg doping level effect 掺镁浓度阈值效应
The methods for increasing the doping level of bittern are proposed as well as the problems for…
同时提出了提高掺卤量的方法和应注意的问题。
These devices have optical waveguide structure, moderate doping level and active layer thickness.
该器件带有光波导结构并具有适当掺杂和有源层厚度。
The methods for increasing the doping level of bittern are proposed as well as the problems for attention.
同时提出了提高掺卤量的方法和应注意的问题。
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