... Drain-gate capacitance 漏栅电容 Drain-source resistance 漏极源极电阻; 漏源电阻 Drain-source voltage 漏源电压 ...
基于8个网页-相关网页
... Drain-gate capacitance 漏栅电容 Drain-source resistance 漏极源极电阻; 漏源电阻 Drain-source voltage 漏源电压 ...
基于1个网页-相关网页
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The result of calculation indicated that the attenuation of source-drain current caused by the source-drain resistance increased when temperature increased.
对寄生的漏源串联电阻及其温度特性进行了详细探讨，计算结果表明，漏源串联电阻给漏源电流造成的衰减在温度升高后变得很大。
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