The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied.
本文研究了电子辐照在氮保护气氛中生长的直拉硅单晶中引入的深能级。
The multistable defect in electron-irradiated Fz silicon has been studied by usingDLTS.
利用深能级瞬态谱（DLTS）对电子辐照区熔硅中多稳态缺陷进行研究的结果表明。
As-implanted silicon wafers are irradiated transiently using a large area low energy electron beam.
本文报道了用低能大面积电子束处理注砷硅片的实验结果。
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