... epitaxial spike 外延层突出局部 epitaxial substrate film 外延衬底膜 epitaxial transistor 外延型晶体管 ...
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The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。
The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate.
该方 法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择 性地沉积含硅膜。
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