A method to study the sacrificial layer etching in nanometer is proposed after lots of experiments.
通过大量的实验研究,建立了一套纳米量级牺牲层腐蚀行为的实验研究方法。
The contact bulges under the bridge are achieved by the full etching and partial etching of the polyimide sacrificial layer.
在工艺上,特别采用了对聚酰亚胺牺牲层进行全刻蚀和半刻蚀的改进加工流程来实现桥背面的接触点。
The sacrificial layer is removed through an etching process such as chemical mechanical planarization.
该牺牲层是通过例如化学机械平面化的蚀刻工艺除去的。
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