Film preparation conditions, film surface morphology and structure of the two kinds of materials are summarized.
总结了这两类材料的成膜条件、薄膜表面形态和结构以及它们的敏感特性。
The results show that the film surface morphology is reticular porous structure, at different time and termination voltage, there is large difference between membrane surface structure;
结果表明：膜层表面微观形貌呈网状多孔结构，不同时间和终止电压下，膜表层结构区别较大；
In argon (ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation. The influence of ambient pressure on surface morphology of nanocrystalline silicon film is studied.
采用脉冲激光烧蚀技术在氩气环境下制备了纳米硅薄膜，研究了环境气体压强对纳米硅薄膜表面形貌的影响。
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