目前NAND Flash大厂的技术架构都是采用浮闸架构(floating-gate structure),但当NAND Flash技术从50奈米、40奈米、20奈米以下之后,制程微缩的瓶颈浮现,尤其到10奈米制程世代后,浮闸架构技术面临很大的...
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A new folded differential pair topology based on quasi-floating gate technique is presented, and an ultra-low voltage op amp based on this structure is designed.
提出了一种基于准浮栅技术的折叠差分结构,基于此结构设计,实现了超低压运算放大器。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
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