定义 中文名称： 镓铟砷磷 英文名称： gallium indium arsenide phosphide 定义： 由镓、铟、砷和磷四元素构成的四元连续固溶体。分子式为GaxIn11xAsyP11y。是重要的光电子材料。 应用学科： 材料科学技术（一级学科）；
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gallium indium arsenide phosphide GaInAsP 镓铟磷砷
indium gallium arsenide phosphide 磷化砷镓铟
gallium indium arsenide phosphide
砷化镓铟磷化物
以上为机器翻译结果，长、整句建议使用 人工翻译 。
Many optical components are typically constructed using materials such as gallium arsenide and indium phosphide.
WSJ: IBM Claims Breakthrough in Laser-Based Chips
Sol Voltaics uses data from its indium phosphide nanowire research to project that its gallium arsenide nanowires will deliver a 25% efficiency gain.
FORBES: A Swedish Solar Startup's Nanowires Promise To Deliver A Big Energy Boost
With its patented InGaP-Plus (Indium Gallium Phosphide) technology, Anadigics may have leapfrogged over its AlGaAs (Aluminum Gallium Arsenide) competitors by enabling some 20% to 25% longer cell phone battery life.
FORBES: Anadigics Powers Up
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