polysilicon gate [电子] 多晶硅栅 ; 多晶硅门
polysilicon gate ccd 多晶硅栅电荷耦合掐 ; 多晶硅栅电荷耦合装置
dual polysilicon gate 双多晶硅栅
polysilicon gate mos 硅栅mos
polysilicon gate device 多晶硅栅器件
double-polysilicon-gate 双多晶硅栅
double doped polysilicon gate 双掺杂多晶硅栅
Gate polysilicon is deposited over the gate oxide.
以及沉积于所述栅极氧化物之上的栅极多晶硅。
At the corner of the gate polysilicon (14.3) and the polysilicon tiles (14.1 and 14.2) are oxide spacers (60.1-60.6).
栅极多晶硅（14.3）和所述多晶硅瓦 片（14.1和14.2）的角落处是氧化物间隔物（60.1-60.6）。
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
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