而基于InP基的InGaAs/InAlAs高迁移率晶体管(high-electron-mobility transistors,HEMTs)与AlGaAs/GaAs高迁移率晶体管相比,具有良好的高频、低噪声特性[8,9].
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gan high electron mobility transistors gan高电子迁移率晶体管
pseudomorphic high electron mobility transistors 赝配高电子迁移率晶体管
persudomorphic high electron mobility transistors 赝配高电子迁移率晶体管
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
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