The results are explained by a hole trapping-weak bonds breaking model.
本文由空穴俘获-弱键破裂模型讨论了实验结果。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
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