The relationship of the ideality factor to the applied voltage is theoretically studied. A model of the SiC pn junctions irradiated by neutron is presented.
推导了辐照后SiC pn结理想因子与外加电压的关系，并给出了SiC pn结中子辐照电特性退化的模型，从而很好解释了SiC pn结辐照后出现的电特性退化的现象。
参考来源 - SiC材料和器件特性及其辐照效应的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
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