It was found that the deepness of impurity energy level is related to the atomic Numbers of doped elements by the analysis of their electronic structures.
通过对电子结构的分析，发现杂质能级的深浅与掺杂元素原子序数有关。
It has been found that a bound state of excitation exists around a paramagnetic impurity with its energy level in the energy gap.
证明在磁性杂质附近，可能形成一个束缚态的元激发，其能量位于能隙之中。
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