技术介绍绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor，简称IGBT)是电磁炉的重要组成部分。然而，由于绝缘栅双极型晶体管是一个大功率的功率管，在电磁炉上电的瞬间，若IGBT得到错误的驱...
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...ductor)并联 电容及二极管而成(也可利用开关自身的寄生电容与二极管)，或绝缘栅 双极晶体管(Insulated Gate Bipolar Transistor)并联电容及二极管而成 (也可利用开关自身的寄生电容与二极管)，除上述的元件外也可为用其 它的开辟元件来取代，即在每个切换周期...
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IGBT-Insulated Gate Bipolar Transistor 绝缘栅双极型功率管 ; 晶体管
Lateral Insulated-gate Bipolar Transistor 横向绝缘栅双极晶体管
insulated gate bipolar transistor IGBT 功率模块
insulated-gate bipolar transistor-IGBT 绝缘栅双极晶体管
complementary lateral insulated-gate bipolar transistor 互补横向绝缘摄双极晶体管
This paper has designed a inverter power supply of volume 2KVA,working frequency 20KHZ. ,based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT(绝缘栅双极晶体管)特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
参考来源 - IGBT高频逆变电源主控电路的设计Full-bridge dual inverter configuration is adopted in main circuit that is supplied by single power source. IGBT (insulated gate bipolar transistor) is comparatively chosen as a switch component to perform energy transfer and power conversion.
电源主电路采用单电源供电，采用输出功率较大的全桥双逆变结构，经过比较选取绝缘栅双极型晶体管IGBT作为主控开关功率转换器件。
参考来源 - 变极性逆变电源的应用研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Insulated Gate Bipolar Transistor (IGBT) as controllable switch, has been applied widely.
绝缘栅双极二级管(IGBT)作为一种可控开关，获得了广泛应用。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
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