A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.

本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。

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Owing to their specialized structures and minute diameter, it can be utilized as a sensor device, semiconductor, or for components of integrated circuits.

由于他们特殊的结构和微小的直径，可以被用于传感器装置、半导体或者集成电路的组件中。

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Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily.

因此，可以容易地制造包含薄膜集成电路的半导体器件。

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