ion beam etching 离子束腐蚀 ; 离子束刻蚀
ion beam etching system 离子束蚀刻系统 ; 离子束刻蚀系统 ; 离子束
ar ion beam etching 氩离子束刻蚀
ion beam etching rate 离子束刻蚀速率
argon ion beam etching 氩离子束刻蚀
Ion Beam Etching system- 离子束刻蚀系统
The influence of quadratic effect of ion-beam etching on pattern profile and the influence of ion-beam etching incidence Angle on slope of pattern sidewall are studied.
介绍了离子束刻蚀的二次效应对图形轮廓以及离子束刻蚀入射角对图形侧壁陡度的影响。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
We derived formulas of thickness of absorbed layer and etching rate of an ion beam from the formula of intensity peaks.
由谱峰强度公式导出了吸附层的厚度和离子束对其剥离速率的表达式。
应用推荐