ion implantation annealing
... ion implant gettering 离子注入吸除 ion implantation annealing 离子注入后退火 ion implantation dosage 离子注入剂量 ...
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Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
管芯研究结果表明,在适当的退火条件下,离子注入掺杂制备浅结是改善器件特性较为理想的方法。
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