The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。
A new method tuning the PID parameters is presented by the normalized dead time of process. The tuning formulae are obtained from the curve fitting in the least-squares sense.
提出了一种利用标准化死区时间整定PID参数的新方法，并利用曲线拟合最小二乘法求得控制器的整定公式。
Based on the idea of curve fitting, the nonlinear least squares method (Gauss-Newton method) has been applied to estimate the complex parameters.
文中对用高斯·牛顿法拟合三参数和四参数极化曲线方程序求取电化学动力学参数提出了两种改进方法。
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