... 窄禁带半导体:narrow gap semiconductor 窄禁带:low energy gap 窄角电视摄象机:narrow angle television camera ...
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Although the energy loss of ordinary multi-layer photonic crystal structures is low, the band gap is usually limited, there is also wide-wide Angle high anti-band hard.
普通多层膜系结构光子晶体的禁带内能量损失较低,可是禁带宽度通常有限,而且出现较宽的全角高反带很难。
The hopping conduction in energy gap of amorphous semiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other.
通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率,解释了非晶半导体中的低温带隙跳跃导电问题。
Low applied voltage, low conductivity of solution and small discharge gap are favorable for the production of hydrogen peroxide per unit electric energy.
低电压、低电导率以及小的电机间距有利于提高单位电量过氧化氢的产率。
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