power MOSFET gate drive circuit 功率场效应晶体管栅极驱动电路
MOSFET-gate dielectric MOSFET栅介质
Dual-Gate MOSFET 双栅场效应管
double gate mosfet 双栅mos场效应晶体管
Tri-Gate MOSFET 三栅MOSFET
double-gate mosfet 双栅mosfet
grooved-gate mosfet 槽栅mosfet
ultrathin gate mosfet 超薄栅mosfet
surrounding gate mosfet 环栅mosfet
The main techniques used to decrease static power are:reduce current from substrate and mosfet gate.
减少静态功耗的主要技术是降低衬底电流和栅电流等。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
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