Resistive random access memory (RRAM) is one of the most promising candidates for next generation of non-volatile memory.

在各种新型非挥发性存储器中，阻变存储器(RRAM)具有成为下一代存储器的潜力。

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Resistive random access memory (RRAM) is anticipated to be the promising next generation non-volatile memory operating with fast switching speed, low power consumption and nondestructive readout.

电阻型随机存储器（RRAM）以其运行速度快、功耗低和非破坏性读出等特性，被预期为理想的新一代非易失存储器。

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MRAM, a next-generation memory based on magnetic materials, has emerged as an alternative to SRAM because it is non-volatile, cutting leak current during standby status.

ENGADGET: Toshiba goes perpendicular to solve MRAM's power issues, rethink cache memory