It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
The invention belongs to the technical field of microelectronics, and in particular discloses a PN (positive-negative) junction and Schottky junction mixed type diode and a preparation method thereof.
本发明属于微电子技术领域，具体公开了一种PN结和肖特基结混合式二极管及其制备方法。
Semiconductor diode is a PN junction together with the corresponding client leads and package composition shell.
二极管是由一个PN结加上相应的引出端并封装管壳构成的。
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