Enhanced pulsed ion source 增强型脉冲离子源
high-intensity pulsed ion source 强流脉冲离子源
Enhanced pulsed-arc ion source 增强型脉冲弧离子源
pulsed electron impact ion source 脉冲电子碰撞离子源
The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
等离子体源离子注入装置由脉冲负高压源系统、热阴极弧放电系统、真空室及样品台、真空系统和监测系统等五部分组成。
The invention relates to an ion implanter (imp) comprising a pulsed plasma source (SPL), a substrate support plate (PPS) and a power supply (ALT) for said plate.
本发明涉及离子注入机imp，包括脉冲等离子体源spl、衬底支承台PPS和所述台的电源alt。
The pulsed GD ion source has the characters of high ion production and working stability. It is suitable for direct analysis of metal in alloy.
其中，辉光放电离子源具有离子产额高、工作稳定可靠等特点，可用于对金属（合金）样品的直接分析。
应用推荐