The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法，控制基片电极的射频自偏压。
An inductively coupled plasma antenna, which is installed on a center of the dielectric window, transfers radio frequency power from an RF power supply to the interior of the processing chamber.
感应耦合等离子体触角安装在介电窗上以便定位在介电窗的中心上，并且将来自射频电源的射频功率传输到加工室内部。
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