...、开关二极管(Switching Diodes)、变容二极管(Varundertakinging professioning Diodes)、肖特基二极管(Schottky Barrier Diodes)、快复原二极管(Fconsidering thneart Recovery Rectifiers）；三极管（Trexcellentsistors）:达林顿三极管（Darlington Trexcel...
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Schottky barrier diodes n 肖特基二极管
Couple of Schottky Barrier Diodes 肖特基二极管对
Schottky barrier rectifier diodes 肖特基管
In this paper,the static I-V characteristics of Schottky barrier diodes forsilicon carbide are studiedsystematically.
本文在SiC肖特基势垒二极管的静态伏安特性方面进行了较为深入的研究。
参考来源 - 碳化硅肖特基势垒二极管静态特性的研究The transistor can be regarded as two back-to-back Schottky barrier diodes.
根据其结构特点，我们可以将其看作是两个背靠背的肖特基二极管。
参考来源 - 硅肖特基源漏MOSFET的模拟研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Schottky barrier diodes with different metal on III nitride have been fabricated.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin.
使用肖特基二极管d1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
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