Two mutually vertical fibers coupling grooves are fabricated by using anisotropic etching of the(110) silicon in the KOH solution.
利用（110）硅片在KOH溶液中各向异性腐蚀制作出两个互相垂直的光纤定位槽。
During fabrication of the NEMS probes, KOH anisotropic etching technology has been developed for the formation of suitable silicon island with top size within 0.5 to 0.8m.
在器件制造的过程中，采用KOH各向异性腐蚀硅尖技术制造出了顶部尺寸在0.5～0.8微米范围内符合要求的硅岛；
A technique for the fabrication of silicon cone cathode array by using anisotropic and isotropic etching has been reported in this paper.
详细研究了利用硅的各向异性腐蚀、各向同性腐蚀制备硅锥阴极阵列的工艺。
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