Chemical-Mechanical % polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) -平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.
分析了W - CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。
Chemical-Mechanical polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) -平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
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