...少子寿命 [gap=1470]r cell; drilling and grooving of laser; shallow expansion; passivation; silicon; the minority carrier lifetime ...
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All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。
Open circuit voltage decay (OCVD) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight, easy operation and good repeatability.
开路电压衰减法(OCVD)具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。
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