D1 and VR1 clamp leading-edge voltage spikes caused by transformer leakage inductance.
D1和VR1的钳尖端的电压尖峰惹起的变压器漏电感。
In common hard switching circuit, high voltage spike usually could be produced during switch transition process because of the effect of transformer leakage inductance and parasitic capacitor.
在常规的硬开关电路中，由于变压器漏感及寄生电容的影响，常常在开关转换瞬间会产生很高的电压尖峰。
For example, the peak at 20 MHz in the spectrum is caused by the parasitic oscillation due to the output capacitance of the MOSFET and the leakage inductance of the transformer.
举例说明，20兆赫兹的峰点是钳位过程结束后主要由场效应晶体管输出电容和变压器漏感引起的寄生振荡产生的。
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